Special Issue of IEEE-ED on Solid-State Image Sensors

Call for Papers for a Special Issue of

IEEE Transactions on Electron Devices on

Solid-State Image Sensors

 

In recent years there have been enormous advances in solid-state image sensors in CMOS (CIS).  Improvements in pixel density, quantum efficiency, power dissipation, temporal noise, fixed-pattern noise are just some of the advancements that are permitting the widespread adoption of image acquisition in consumer appliances such as personal digital assistants, digital still cameras, camcorders, cell phone handsets as well as in automotive, industrial, medical and scientific applications.  This special issue will provide a focal point for reporting these advancements in an archival journal and serve as an educational tool for the solid-state image sensor community.  Previous special issues on solid-state image sensors were published in 1976, 1985, 1991, 1997, 2003 and 2009.

 

Areas of interest include, but are not limited to:

 

  1. Pixel device physics (New devices and structures, Advanced materials, Improved models and scaling, Advanced pixel circuits, Performance enhancement for QE, Dark current, Noise, Charge Multiplication Devices, etc.)
  2. Image sensor design and performance (New architectures, Small pixels and Large format arrays, High dynamic range, 3D range capture, Low voltage, Low power, High frame rate readout, Scientific-grade, Single-Photon Sensitivity)
  3. Image-sensor-specific peripheral circuits (ADCs and readout electronics, Color and image processing, Smart sensors and computational sensors, System on a chip)
  4. Non-visible “image” sensors (Enhanced spectral response  e.g., UV, NIR, High energy photon and particle detectors e.g., electrons, X-rays, Ions, Hybrid detectors, THz imagers)
  5. Fabrication, packaging and manufacturing (stacked image sensors, back-side illuminated devices)
  6. Miscellaneous topics related to image sensor technology

     

    Submission Deadline:  February 28th, 2015

    Targeted Publication Date: January 2016

     

     

    Guest Editor-in-Chief:

    Prof. dr. Albert Theuwissen, Harvest Imaging, Bree, Belgium, and Delft University of Technology, Delft, the Netherlands.

     

    Guest Editors:

    Prof. dr. Eric Fossum, Thayer School of Engineering, Dartmouth, NH, USA,

    Dr. Boyd Fowler, Google, Mountain View, CA, USA,

    Prof. dr. Shoji Kawahito, Shizuoka University, Shizuoka, Japan,

    Prof. dr. Pierre Magnan, ISAE, Toulouse, France,

    Dr. Junichi Nakamura, Brillnics, Tokyo, Japan,

    Dr. Johannes Solhusvik, Omnivision, Oslo, Norway,

    Prof. Nobukazu Teranishi, University of Hyogo, Japan, and Shizuoka Univeristy, Japan,

    Dr. John Tower, SRI International, Princeton, NJ, USA.

     

     Please submit papers by using the website : http:/mc.manuscriptcentral.com/ted , be sure to mention the special issue within the cover letter.

3 Responses to “Special Issue of IEEE-ED on Solid-State Image Sensors”

  1. Venkataramana R. Chavva says:

    I would like to write a paper on ion implantation technology for advanced image sensor (CCD/CIS) manufacturing. I was wondering,”would it be an area of interest?”
    I have been demosntrating medium/high energy ion implant capability for a variety of image sensing customers for more than a decade. I have also presented a paper on Metals Gettering in IISW2013. Please let me know, should you have anysuggestions.
    With regards,
    Venkataramana R. Chavva, PhD

  2. albert says:

    Good idea to get some papers on technology ! Albert.

  3. Venkataramana R. Chavva says:

    Albert!
    Since you are the Chief Editor, would you be able to make any suggestions, how do you want me to structure this paper?
    What are they (image sensing community) looking for?
    Regards,
    Chavva

Leave a Reply